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Magazine Name : Ieee Transactions On Electron Devices

Year : 2002 Volume number : 49 Issue: 02

Sub-Ft Gain Resonance Of Inp/Ingaas-Hbts (Article)
Subject: Compound Semiconductor Devices
Author: M Rohner     
page:      213 - 220
High Breakdown Characteristic 8-Doped Ingaas/Aigaas Tunneling Real-Space Transfer Hemt (Article)
Subject: Compound Semiconductor Devices
Author: C. W Hsu      Y W Chen     
page:      221 - 225
Silc As A Measure Of Trap Generation And Predictor Of Tbd In Ultrathin Oxides (Article)
Subject: Reliability
Author: M A Alam     
page:      226 - 231
A Study Of Soft And Hard Breakdown Part 1: Analysis Of Statistical Percolation Conductance (Article)
Subject: Reliability
Author: M A Alam     
page:      232 - 238
A Study Of Soft And Hard Breakdown Part Ii: Principles Of Area, Thickness, And Voltage Scaling (Article)
Subject: Reliability
Author: M A Alam     
page:      239 - 246
On Interface And Oxide Degradation In Vlsi Mosfets-Part I: Deuterium Effect In Che Stress Regime (Article)
Subject: Reliability
Author: D Esseni     
page:      247 - 253
On Interface And Oxide Degradation In Vlsi Mosfets-Part Ii: Fowler-Nordheim Stress Regime (Article)
Subject: Reliability
Author: D Esseni     
page:      254 - 263
Ambipolar Schottky-Barrier Tfts (Article)
Subject: Silicon Devices
Author: H. C Lin     
page:      264 - 270
A 0-2-Um 180-Ghz-Fmax 6.7-Ps-Ecl Soi/Hrs Self-Aligned Seg Sige Hbt/Cmos Technology For Microwave And High-Speed Digital Applications (Article)
Subject: Silicon Devices
Author: K Washio     
page:      264 - 270
High-Speed Digital Applications (Article)
Subject: Silicon Devices
Author: H Shimamoto     
page:      271 - 278
Design And Fabrication Of 50-Nm Thin-Body P-Mosfets With A Sige Heterostructure Channel (Article)
Subject: Silicon Devices
Author: K. V Subramaniam     
page:      279 - 286
Analytical Modeling Of Quantization And Volume Inversion In Thin-Si-Film Dg Mosfets (Article)
Subject: Silicon Devices
Author: L Ge     
page:      287 - 294
Ultralow Resistance W/Poly-Si Gate Coms Technology Using Amorphous-Sitin Buffer Layer (Article)
Subject: Silicon Devices
Author: H Wakabayashi     
page:      295 - 300
A New Compact Dc Model Of Floating Gate Memory Cells Without Capacitive Coupling Coefficients (Article)
Subject: Silicon Devices
Author: L Larcher     
page:      301 - 307
Threshold Voltage Roll-Up/Roll-Off Characteristic Control In Sub-0.2-Um Single Workfunction Gate Cmos For High-Performance Dram Applications (Article)
Subject: Silicon Devices
Author: S Inaba     
page:      308 - 313
Characterization Of Deep Levels In Pt-Gan Schottky Diodes Deposited On Intermediate-Temperature Buffer Layers (Article)
Subject: Solid-State Device Phenomena
Author: Bosco H Leung     
page:      314 - 318
Flicker Noise In Gate Overlapped Polycrystalline Silicon Thin-Film Transistors (Article)
Subject: Solid-State Device Phenomena
Author: Mohammed Rahal     
page:      319 - 323
A Novel Approach For Focusing Electron Beams Using Low-Cost Ceramic Grid (Article)
Subject: Vacuum Electron Devices
Author: Chi Xie     
page:      324 - 328
Transparent And Quasi-Transparent Regional Solutions To Minority-Carrier Transport In Arbitrarily Doped Semiconductors (Article)
Subject: Transport Systems , Quasi-Static , Transparent
Author: L Abenante     
page:      329 - 330
Linear Cofactor Difference Method Of Mosfet Subthreshold Characteristics For Extracting Interface Traps Induced By Gate Oxide Stress Test (Article)
Subject: Mosfets , Subthreshold Logic , Linear
Author: J. H He      R Huang     
page:      331 - 333
Large-Area Lateral P-I-N Photodiode On Soi (Article)
Subject: Photodiode On Soi
Author: Dr. Heiner Zimmermann     
page:      334 - 336